A Monte Carlo simulation of damage to the gate oxide of metal-oxide-silicon field-effect transistors from electron beam lithography
- 1 March 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (5) , 2024-2030
- https://doi.org/10.1063/1.342896
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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