Film-edge-induced stress in silicon substrates
- 1 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (1) , 5-7
- https://doi.org/10.1063/1.89840
Abstract
Stress fields in silicon substrates, induced by edges of silicon nitride films, were studied by experimentally observing the distribution of indentation‐injected dislocation half‐loops in the vicinity of the film edge. From this distribution, the stress field was obtained by applying the method of analysis recently introduced by the author. The results were compared to the theoretical stress field due to a line force (an approximation) tangential to the boundary of a half‐space, with good agreement.Keywords
This publication has 5 references indexed in Scilit:
- A method for finding critical stresses of dislocation movementApplied Physics Letters, 1977
- Dislocation propagation and emitter edge defects in silicon wafersJournal of Applied Physics, 1976
- Residual stress in silicon nitride filmsJournal of Electronic Materials, 1976
- On indentation dislocation rosettes in siliconJournal of Applied Physics, 1975
- Effects of surface films and film edges on dislocation movement in siliconJournal of Applied Physics, 1975