Field-emission properties of surface-processed TiC tips
- 14 November 1989
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 22 (11) , 1763-1767
- https://doi.org/10.1088/0022-3727/22/11/031
Abstract
Surface-processed TiC(110) tips have been developed to obtain highly stable emission as a cold field-electron emission source. The surface processing consists of heating the tip at 1000-1100 degrees C in a gas such as ethylene, oxygen or hydrogen sulphide, and the subsequent continuous emission of 10 mu A for 30 minutes. The field-emission pattern and the current stability of surface-processed TiC(110) tips have been investigated for several kinds of surface processing.Keywords
This publication has 12 references indexed in Scilit:
- Atomic chemical composition and reactivity of the TiC(111) surfaceSurface Science, 1985
- Field electron emission properties of TiC single crystalsJournal of Applied Physics, 1985
- Stable carbide field emitterApplied Physics Letters, 1983
- Direct Analysis of the Structure, Concentration, and Chemical Activity of Surface Atomic Vacancies by Specialized Low-Energy Ion-Scattering Spectroscopy: TiC(001)Physical Review Letters, 1983
- Preparation of TiCx single crystals with maximum carbon content by a floating zone techniqueJournal of Crystal Growth, 1983
- Study on titanium carbide field emitters by field-ion microscopy, field-electron emission microscopy, Auger electron spectroscopy, and atom-probe field-ion microscopySurface Science, 1982
- Stable field emission for electron beam illuminationSurface Science, 1976
- Field electron cathode stability studies: Zirconium/tungsten thermal-field cathodeJournal of Applied Physics, 1975
- Field Emission Studies of TiC Single CrystalJapanese Journal of Applied Physics, 1974
- A High-Resolution Scanning Transmission Electron MicroscopeJournal of Applied Physics, 1968