Extended study of crosstalk in SOI-SIMOX substrates
- 1 January 1995
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 713-716
- https://doi.org/10.1109/iedm.1995.499318
Abstract
This work analyzes crosstalk phenomena in SOI-SIMOX substrates by means of two-dimensional device simulations and measurements on test structures. The influence of the substrate resistivity and of guard rings is studied. The results are compared with those obtained for standard CMOS technology. A significant crosstalk reduction, up to 10 GHz, is obtained with high-resistivity substrates. A simple modeling is proposed to explain and simulate the phenomenon.Keywords
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