Degradation-free electron cyclotron resonance plasma etching of InP
- 1 September 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (9) , 929-933
- https://doi.org/10.1088/0268-1242/6/9/016
Abstract
The authors report the first demonstration of featureless surface morphology on InP plasma etched in CH4/H2/Ar electron cyclotron resonance (ECR) discharges. At a plasma composition of 5 CH4/17 H2/8 Ar it is necessary to limit the microwave input power to or=3 compared with CH4/H2 alone, indicating that some additional degree of ion bombardment is necessary with this gas chemistry even under ECR conditions. Degradation of the InP photoluminescence as a result of plasma etching at bias voltages less than 150 V can be completely quenched by the addition of PCl3 to the discharge. This provides a phosphorus partial pressure during the etch, maintaining the stoichiometry of the InP surface.Keywords
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