High-mobility double-gate organic single-crystal transistors with organic crystal gate insulators
- 30 April 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (18) , 182117
- https://doi.org/10.1063/1.2736208
Abstract
High-mobility organic transistors are fabricated on both surfaces of approximately 1 - μ m -thick rubrene crystals, molecularly flat over an area of 10 × 10 μ m 2 . A thin platelet of 9,10-diphenylanthracene single crystal and surface-passivated Si O 2 are used for the gate insulators. Because of the minimized densities of hole-trapping levels at the interfaces and in the rubrene crystal, the field-induced carriers do not necessarily reside near the interface but are distributed in the bulk of the semiconductor by adjusting the two gate voltages. Making use of the highly mobile carriers in the inner crystal, the mobility is maximized to ∼ 43 cm 2 ∕ V s .Keywords
This publication has 21 references indexed in Scilit:
- Very high-mobility organic single-crystal transistors with in-crystal conduction channelsApplied Physics Letters, 2007
- One‐Dimensional Quantum‐Confinement Effect in α‐Fe2O3 Ultrafine Nanorod ArraysAdvanced Materials, 2005
- Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic ElectronicsAdvanced Materials, 2005
- High‐Performance n‐ and p‐Type Single‐Crystal Organic Transistors with Free‐Space Gate DielectricsAdvanced Materials, 2004
- Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistorsApplied Physics Letters, 2004
- Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectricApplied Physics Letters, 2004
- Field-effect transistors on tetracene single crystalsApplied Physics Letters, 2003
- Field-induced charge transport at the surface of pentacene single crystals: A method to study charge dynamics of two-dimensional electron systems in organic crystalsJournal of Applied Physics, 2003
- Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V sApplied Physics Letters, 2003
- High-mobility polymer gate dielectric pentacene thin film transistorsJournal of Applied Physics, 2002