Preparation and Properties of Polycrystalline Silicon Carbide Films Produced by Plasma Enhanced Chemical Vapor Deposition, and Their Applications
- 1 January 1989
- book chapter
- Published by Springer Nature
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- An x-ray topographic study of β-SiC films on Si substratesJournal of Applied Physics, 1987
- Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor depositionJournal of Applied Physics, 1987
- Schottky-barrier field-effect transistors of 3C-SiCJournal of Applied Physics, 1986
- Compensation in epitaxial cubic SiC filmsApplied Physics Letters, 1986
- Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate LayerJournal of the Electrochemical Society, 1980