Structural and electronic properties of α-Sn, CdTe, and their [001] monolayer superlattices
- 15 April 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (11) , 8951-8961
- https://doi.org/10.1103/physrevb.43.8951
Abstract
A systematic study of the structural and electronic properties of α-Sn, CdTe, and their [001] monolayer superlattices (namely, Cd, Te, and CdTe) using the total-energy local-density all-electron full-potential linearized augmented-plane-wave method is presented. Our results show that (i) good agreement with experiment is obtained for the ground-state properties of the pure constituents; (ii) ‘‘compensated’’ CdTe is unstable with respect to phase separation; (iii) the substitution of Sn for Te is energetically the most unfavorable; (iv) large tetragonal distortions are found when Sn is substituted for Cd, while bond-length conservation is found when Sn replaces Te; (v) all the structures studied show (within the local-density approximation) a direct band gap higher than that of pure α-Sn; (vi) in all the structures considered, the direct gap is favored over the indirect Γ-L gap.
Keywords
This publication has 46 references indexed in Scilit:
- Observation of quantum size effect in the resistivity of thin, gray tin epilayersApplied Physics Letters, 1989
- Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxyApplied Physics Letters, 1989
- Interface and growth studies of α-Sn/CdTe(110) superlatticesJournal of Vacuum Science & Technology B, 1988
- Angle-resolved photoemission study of theα-Sn/CdTe(100) interfacePhysical Review B, 1987
- Theoretical examination of the quantum-size effect in thin grey-tin filmsPhysical Review B, 1986
- Thin-film quantization studies of grey tin epitaxially grown on CdTe(111)Physical Review B, 1985
- Total-energy full-potential linearized augmented-plane-wave method for bulk solids: Electronic and structural properties of tungstenPhysical Review B, 1984
- Atomic structure and properties of polar Ge-GaAs(100) interfacesPhysical Review B, 1981
- Atomic reconstruction at polar interfaces of semiconductorsJournal of Vacuum Science and Technology, 1980
- Polar heterojunction interfacesPhysical Review B, 1978