Smoothing of Si Trench Sidewall Surface by Chemical Dry Etching and Sacrificial Oxidation
- 1 July 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (7R)
- https://doi.org/10.1143/jjap.37.3954
Abstract
By combining the effects of chemical dry etching (CDE) and sacrificial oxidation, a smooth trench sidewall surface with a root-mean-square (Rms) roughness of less than 1 nm was obtained. The possibility of obtaining a smooth surface such as that of a planar metal-oxide-semiconductor (MOS) by increasing both the CDE etching time and the oxide thickness of sacrificial oxidation appears likely.Keywords
This publication has 3 references indexed in Scilit:
- Striations on Si Trench Sidewalls Observed by Atomic Force MicroscopyJapanese Journal of Applied Physics, 1997
- Exact evaluation of channel mobility for trench MOSFET using split C–V methodApplied Surface Science, 1997
- 500-V n-channel insulated-gate bipolar transistor with a trench gate structureIEEE Transactions on Electron Devices, 1989