Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—I
- 31 December 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (12) , 1371-1375
- https://doi.org/10.1016/0038-1101(72)90131-1
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Notes on the theory of the forward characteristic of power rectifiersSolid-State Electronics, 1968
- The forward characteristic of silicon power rectifiers at high current densitiesSolid-State Electronics, 1968
- Determination of the lifetime from the stored carrier charge in diffused psn rectifiersSolid-State Electronics, 1965
- P+IN+ silicon diodes at high forward current densitiesSolid-State Electronics, 1965
- An experimental determination of the carrier lifetime in p-i-n diodes from the stored carrier chargeSolid-State Electronics, 1964
- Electron-Hole Scattering at High Injection-Levels in GermaniumNature, 1962
- Turn-on Transient of p-n-p-n Triode †Journal of Electronics and Control, 1959
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- The Combination of Resistivities in SemiconductorsPhysical Review B, 1951
- Theory of Impurity Scattering in SemiconductorsPhysical Review B, 1950