A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFET's
- 1 December 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 29 (12) , 1298-1310
- https://doi.org/10.1109/tmtt.1981.1130556
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Microwave Nanosecond Pulse Burnout Properties of GsAs MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Microwave Nanosecond Pulse Burnout Properties of GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1979
- Study on Reliability of Low Noise GaAs MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979