Temperature properties of the static induction transistor
- 28 February 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (2) , 105-107
- https://doi.org/10.1016/0038-1101(81)90002-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Entirely diffused vertical channel JFET: Theory and experimentSolid-State Electronics, 1978
- High-frequency high-power static induction transistorIEEE Transactions on Electron Devices, 1978
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- Optimum design of triode-like JFET's by two-dimensional computer simulationIEEE Transactions on Electron Devices, 1977
- Temperature dependence of triodelike JFET drain current after pinchoffIEEE Transactions on Electron Devices, 1977
- Temperature coefficient of resistivity of silicon and germanium near room temperatureSolid-State Electronics, 1968