High reflectivity Te-doped GaAsSb/AlAsSbBragg mirror for 1.5 µm surface emitting lasers
- 16 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (2) , 140-142
- https://doi.org/10.1049/el:19970112
Abstract
A high reflectivity GaAsSb/AlAsSb Bragg mirror lattice matched to InP is reported. Operation at 1.5 µm is obtained owing to a large Burstein-Moss shift of GaAsSb absorption caused by a strong N-doping up to 1019 cm-3. Peak reflectivity up to 94% has been measured with only 11.5 periods.Keywords
This publication has 4 references indexed in Scilit:
- AlAsSb/AlGaAsSb Bragg stacks for 1.55 µm wavelengthgrown by molecular beam epitaxyElectronics Letters, 1995
- Digital alloy AlAsSb/AlGaAsSb distributed Braggreflectors lattice matched to InP for 1.3 – 1.55µm wavelength rangeElectronics Letters, 1995
- Highly doped 1.55 µm Ga
x
In 1-
x
As/InPdistributed Bragg reflector stacksElectronics Letters, 1994
- Carrier-induced change in refractive index of InP, GaAs and InGaAsPIEEE Journal of Quantum Electronics, 1990