Molecular Beam Epitaxy of SnSe2: Chemistry and Electronic Properties of Interfaces
- 1 March 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (3R)
- https://doi.org/10.1143/jjap.32.1182
Abstract
A layered material SnSe2 was grown epitaxially on various layered materials (MoS2, NbSe2, graphite), while reacting with Al2O3(0001) substrates. The films were characterized by means of X-ray photoemission spectroscopy, reflection high energy electron diffraction, and scanning tunneling microscopy. The observed band bending was consistent to the work function difference between the film and the substrate, indicating the Schottky limit property of the junctions. Applications of this system are discussed.Keywords
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