High-efficiency, zero-bias waveguide pin photodiodefor low-power-consumption optical hybrid modules
- 16 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (2) , 160-161
- https://doi.org/10.1049/el:19970097
Abstract
The authors propose a novel waveguide photodiode structure that has an intentionally doped p-type region in the photoabsorption layer in order to make the operating voltage lower while keeping a high efficiency. The fabricated device has a high efficiency of 0.94 A/W and a 3 dB bandwidth near 4 GHz at an operating voltage of 0 V. This waveguide photodiode is suitable for an optical hybrid module built with low-power ICs.Keywords
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