“Radiation Sieve” Effect during Epitaxy from Low Energy Ion-Molecular Flow
- 16 August 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 114 (2) , K163-K166
- https://doi.org/10.1002/pssa.2211140249
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Study of the peculiarities of film growth from molecular beams by the method of simulationPhysica Status Solidi (a), 1985
- Epitaxial growth of Si on (1̄012) Al2O3 by partially ionized vapor depositionJournal of Vacuum Science and Technology, 1980
- Epitaxial Deposition of Germanium by Both Sputtering and EvaporationJournal of Applied Physics, 1966