Hot electron luminescence in ZnS alternating-current thin-film electroluminescent devices
- 12 July 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (2) , 231-233
- https://doi.org/10.1063/1.110350
Abstract
Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted by American Institute of Physics (http://www.aip.org/).Hot electron luminescence experiments are performed on ZnS alternating-current thin-film electroluminescent (ACTFEL) devices in order to determine the extent to which the electron distribution is heated. The luminescence spectrum is found to be broad and essentially featureless up to a high energy cutoff of approximately 3.7 eV, which is determined by optical absorption within the ZnS. This result indicates that under normal operating conditions in a ZnS ACTFEL device, a significant fraction of the electrons transported across the phosphor possess energies equal to or in excess of the ZnS band gapKeywords
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