Silica buried channel waveguides fabricated at lowtemperature using PECVD
- 15 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (4) , 326-327
- https://doi.org/10.1049/el:19960254
Abstract
Buried channel waveguides made of silica films deposited on silicon substrates have been fabricated at low temperature (<100°C) without thermal annealing, using the Helicon plasma deposition technique. The guides have losses as low as 1 dB/cm. A 1 × 8 splitter comprising concatenated Y-junctions has been fabricated and characterised.Keywords
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