K/Si(100) 2 × 1: A Case Study for the Transfer of Charge between Alkali Metals and Semiconductor Surfaces
- 15 April 1988
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 5 (8) , 727-732
- https://doi.org/10.1209/0295-5075/5/8/011
Abstract
Experimental data and theoretical calculations for K/Si(100) 2 × 1 provide a picture of the interface interaction essentially similar to the one established for adsorption of alkali metals on metals in contradiction with recent calculations. In particular, the transfer of charge from K to Si decreases with coverage and it is far from being complete at saturation coverage. The K-Si bond length and the charge transfer indicate that the bonding has a substantial covalent character.Keywords
This publication has 18 references indexed in Scilit:
- Ultrathin gate oxides formed by catalytic oxidation of siliconApplied Physics Letters, 1987
- Metallization of Silicon upon Potassium AdsorptionPhysical Review Letters, 1987
- On the formation of semiconductor interfacesJournal of Physics C: Solid State Physics, 1987
- New experimental studies on the adsorption of K on Si(100) and Si(111)Surface Science, 1986
- Novel electronic properties of a potassium overlayer on Si(001)-(2×1)Physical Review Letters, 1986
- Valence Level of Adsorbed K Atoms Probed by Metastable-He Deexcitation SpectroscopyPhysical Review Letters, 1985
- Schottky barrier formation. I. Abrupt metal-semiconductor junctionsJournal of Physics C: Solid State Physics, 1983
- Electronic excitations in K monolayer adsorbed on Si(100) 2 × 1Surface Science, 1983
- Theory of Electrical Double Layers in Adsorbed FilmsPhysical Review B, 1935
- VAPOR PRESSURES, EVAPORATION, CONDENSATION AND ADSORPTIONJournal of the American Chemical Society, 1932