Blocking of silicon oxidation by low-dose nitrogen implantation
- 1 January 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 45 (1) , 73-76
- https://doi.org/10.1007/bf00618766
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Rapid thermal nitridation of thin thermal silicon dioxide filmsApplied Physics Letters, 1985
- Anodic nitridation of silicon and silicon dioxideIEEE Transactions on Electron Devices, 1985
- Device Processing Aspects of Ion Beam NitridationJournal of the Electrochemical Society, 1984
- The Material Properties of Silicon Nitride Formed by Low Energy Ion ImplantationJournal of the Electrochemical Society, 1984
- Characterization of Implanted Nitride for VLSI ApplicationsJournal of the Electrochemical Society, 1984
- The application of nitrogen ion implantation in silicon technologyNuclear Instruments and Methods in Physics Research, 1983
- The Oxidation Inhibition in Nitrogen‐Implanted SiliconJournal of the Electrochemical Society, 1982
- Room Temperature Formation of Si‐Nitride Films by Low Energy Nitrogen Ion Implantation into SiliconJournal of the Electrochemical Society, 1982
- Oxidation inhibiting properties of Si3N4-layers produced by ion implantationApplied Physics A, 1980
- Thermal Oxidation of Silicon after Ion ImplantationJournal of the Electrochemical Society, 1973