Dynamic hot-carrier stressing of reoxidized nitrided oxide
- 1 February 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (2) , 63-65
- https://doi.org/10.1109/55.75704
Abstract
Dynamic channel hot-carrier stress measurements were performed on reoxidized nitrided oxide (RNO) nMOSFETs in order to determine the importance of the high-gate-voltage electron trapping that occurs during static stress. RNO transistors stressed under circuit operation conditions were found to exhibit extrapolated lifetime 10/sup 7/ times greater than the lifetime determined from static stress measurements at the worst-case condition V/sub g/ approximately V/sub d/. Comparing RNO with conventional oxide under high-voltage dynamic stress conditions predicts a lifetime gain of 10/sup 10/ for the RNO. This finding makes RNO an extremely attractive gate dielectric candidate for scaled CMOS devices.Keywords
This publication has 13 references indexed in Scilit:
- Channel hot-carrier stressing of reoxidized nitrided silicon dioxideIEEE Transactions on Electron Devices, 1990
- The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETsIEEE Transactions on Electron Devices, 1990
- The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- Improved hot-carrier immunity in submicrometer MOSFETs with reoxidized nitrided oxides prepared by rapid thermal processingIEEE Electron Device Letters, 1989
- Short- and long-term reliability of nitrided oxide MISFETsIEEE Transactions on Electron Devices, 1988
- Hot-carrier-induced MOSFET degradation under AC stressIEEE Electron Device Letters, 1987
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- Degradation of n-MOS-Transistors after pulsed stressIEEE Electron Device Letters, 1984
- Dynamic behavior of the buildup of fixed charge and interface states during hot-carrier injection in encapsulated MOSFET'sIEEE Transactions on Electron Devices, 1983
- 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraintsIEEE Transactions on Electron Devices, 1979