Silicon nitride films grown on silicon below 300 °C in low power nitrogen plasma
- 14 July 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (2) , 97-99
- https://doi.org/10.1063/1.97363
Abstract
Device quality silicon nitride films ranging in thickness down to 30 Å were successfully grown on silicon at temperatures below 300 °C in a radio frequency (rf) nitrogen plasma. The growth rate was controlled in the range 5–100 Å/h by changing nitrogen pressure, rf power, and growth temperature. Electron microscopy and Auger spectroscopy showed that the films were amorphous, microcrack‐free, close to stoichiometry Si3N4, and formed a sharp interface with the Si substrate. The breakdown voltage of Al‐Si3N4‐Si capacitors was about (1.3±0.2)×107 V/cm and the typical density of the leakage current was below 3×10−7 A/cm2 at 5 V bias for films 70 Å thick.Keywords
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