Electronic properties of silicon epitaxial layers deposited by ion-assisted deposition at low temperatures
- 1 September 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (5) , 3015-3021
- https://doi.org/10.1063/1.1287530
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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