Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition
- 16 August 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (7) , 992-994
- https://doi.org/10.1063/1.124576
Abstract
We demonstrate epitaxial silicon growth of 8 Å/s at temperatures as low as 195 °C, using hot-wire chemical vapor deposition. Characterization by transmission electron microscopy shows epitaxial layers of Si. We briefly discuss various aspects of the process parameter space. Finally, we consider differences in the chemical kinetics of this process when compared to other epitaxial deposition techniques.Keywords
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