Study on further reducing the epitaxial silicon temperature down to 250 °C in low-energy bias sputtering
- 15 February 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (4) , 2062-2071
- https://doi.org/10.1063/1.348732
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
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