Electrical quality of low-temperature (Tdep=775 °C) epitaxial silicon: The effect of deposition rate
- 15 January 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (2) , 383-389
- https://doi.org/10.1063/1.340249
Abstract
The results of an investigation of the effects of varying the deposition rate on the surface morphology and electrical characteristics of low‐temperature (Tdep=775 °C) epitaxial silicon are presented. The data indicate that the electrical characteristics are a strong function of the growth rate, even more so than the deposition temperature. Varying the growth rate by a factor of 16 varies the minority‐carrier lifetime and reverse‐bias diode leakage current by five orders of magnitude, and has a strong impact on the surface morphology of the epitaxial layer. Deposition conditions will be reported that yielded a minority‐carrier lifetime of 480 μs, which is the highest lifetime reported in low‐temperature epitaxial silicon.This publication has 10 references indexed in Scilit:
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