Dynamic Annealing and Amorphous Phase Formation in Si, GaAs and AlGaAs Under Ion Irradiation
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- The kinetics of self ion amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Damage accumulation and amorphization in GaAs-AlGaAs structuresNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Subsurface Processing of Electronic Materials Assisted by Atomic DisplacementsMRS Bulletin, 1992
- Damage generation and annealing in Ga+ implanted GaAs/(Ga,Al)As quantum wellsJournal of Applied Physics, 1992
- A comparison of the amorphization induced in AlxGa1−xAs and GaAs by heavy-ion irradiationJournal of Applied Physics, 1991
- Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structuresApplied Physics Letters, 1989
- Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in siliconJournal of Materials Research, 1988
- A systematic analysis of defects in ion-implanted siliconApplied Physics A, 1988
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972