6×2 surface reconstruction for the two-dimensional heteroepitaxial growth of InAs on GaAs
- 15 March 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (12) , R6862-R6865
- https://doi.org/10.1103/physrevb.57.r6862
Abstract
Based on molecular-beam-epitaxy scanning-tunneling-microscopy (STM) observations, we report a 6×2 reconstructed surface formed in the initial stage of highly strained InAs growth on GaAs(001). Atomic-resolution STM images show several unique features in its structure and morphology, compared to other InAs or GaAs(001) reconstructions. We have documented that the formation of the 6×2 surface is critical for desirable layer-by-layer growth and proposed a dimer-based structure model.Keywords
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