Surface resonant tunneling transistor: A new negative transconductance device
- 31 January 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (5) , 610-612
- https://doi.org/10.1063/1.111065
Abstract
A new three-terminal device, the surface resonant tunneling transistor, is realized by the molecular beam epitaxial cleaved edge overgrowth technique in the GaAs/AlGaAs system. The device exhibits negative transconductance as well as negative differential resistance. Some possibilities for future applications of the device to low-power logic circuits are discussed.Keywords
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