GaAs field-effect transistor with an atomically precise ultrashort gate
- 26 August 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (9) , 1111-1113
- https://doi.org/10.1063/1.106360
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Quantum wire structures by MBE overgrowth on a cleaved edgeJournal of Crystal Growth, 1991
- A metal-oxide-semiconductor field-effect transistor with a 20-nm channel lengthJournal of Applied Physics, 1990
- Experimental technology and performance of 0.1-µm-gate-length FETs operated at liquid-nitrogen temperatureIBM Journal of Research and Development, 1990
- Ultra-submicrometer-gate AlGaAs/GaAs HEMTsIEEE Electron Device Letters, 1990
- Formation of a high quality two-dimensional electron gas on cleaved GaAsApplied Physics Letters, 1990
- Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experimentIEEE Transactions on Electron Devices, 1989
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- Velocity overshoot in ultra-short-gate-length GaAs MESFETsIEEE Transactions on Electron Devices, 1988
- Sub-100-nm gate length GaAs metal–semiconductor field-effect transistors and modulation-doped field-effect transistors fabricated by a combination of molecular-beam epitaxy and electron-beam lithographyJournal of Vacuum Science & Technology B, 1988
- 0.1-µm Gate-length pseudomorphic HEMT'sIEEE Electron Device Letters, 1987