Effect of Electron-Hole Recombination on the Performance of Bi12SiO20 Optical Image Converter
- 1 December 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (12)
- https://doi.org/10.1143/jjap.20.2373
Abstract
The characteristic curve showing transmission versus exposure for an image converter using Bi12SiO20 single crystal was analyzed by a simple model in which crystal absorption, carrier diffusion, and recombinations between electrons and holes were considered. The variation of transmission with exposure was represented by a system of equations. The system of equations was solved numerically by an iterative technique using a computer. Results of the theoretical analysis were compared with experimental results. It was shown that the electron-hole recombination was important in the performance of the device.Keywords
This publication has 12 references indexed in Scilit:
- Incoherent-to-Coherent Optical Image Converter of Transmission Type Using Bi12SiO20Single CrystalsJapanese Journal of Applied Physics, 1979
- Characteristic Curve of a Reusable Optical Image Recorder of Transmission Type Using Bi12SiO20Single CrystalJapanese Journal of Applied Physics, 1977
- Effect of bulk carriers on PROM sensitivityJournal of Applied Physics, 1975
- Imaging Characteristics of the Itek PROMApplied Optics, 1974
- The Prom Device In Optical Processing SystemsOptical Engineering, 1974
- Transport processes of photoinduced carriers in Bi12SiO20Journal of Applied Physics, 1973
- POCKELS READOUT OPTICAL MEMORY USING Bi12SiO20Applied Physics Letters, 1971
- Thermally Stimulated Currents and Luminescence in Bi12SiO20 and Bi12GeO20Journal of Applied Physics, 1971
- Electrical and Optical Properties of Bi12SiO20Journal of Applied Physics, 1971
- PHOTOLUMINESCENCE IN Bi12SiO20 AND Bi12GeO20Applied Physics Letters, 1970