Effects of Impurities on the Competition between Solid Phase Epitaxy and Random Crystallization In Ion-Implanted Silicon
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Influence of F and Cl on the recrystallization of ion-implanted amorphous SiJournal of Applied Physics, 1984
- Kinetic Competition During Solid Phase Crystallization in Ion–Implanted SiliconMRS Proceedings, 1983
- Laser-Induced Solid Phase Crystallization in Amorphous Silicon FilmsMRS Proceedings, 1982
- Competition Between Solid Phase Epitaxy and Random Crystallization During cw Laser Annealing of Amorphous Si FilmsMRS Proceedings, 1981
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977