Optical investigation of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5
- 28 June 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 227-228, 458-465
- https://doi.org/10.1016/s0022-0248(01)00743-6
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaNApplied Physics Letters, 1998
- Low noise p-π-n GaN ultraviolet photodetectorsApplied Physics Letters, 1997
- High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structuresApplied Physics Letters, 1997
- Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN filmsApplied Physics Letters, 1997
- Long range order in AlxGa1−xN films grown by molecular beam epitaxyApplied Physics Letters, 1997
- Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistorsApplied Physics Letters, 1996
- Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistorsApplied Physics Letters, 1996
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- High quality self-nucleated AlxGa1−x N layers on (00.1) sapphire by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1994
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982