The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN
- 5 January 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (1) , 85-87
- https://doi.org/10.1063/1.120652
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Growth kinetics of GaN grown by gas-source molecular beam epitaxyJournal of Crystal Growth, 1997
- Gallium incorporation kinetics during gas source molecular beam epitaxy growth of GaNSolid-State Electronics, 1997
- Molecular beam epitaxy growth kinetics for group III nitridesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Gallium Incorporation Kinetics During GSMBE of GaNMRS Proceedings, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Deposition, characterization, and device development in diamond, silicon carbide, and gallium nitride thin filmsJournal of Vacuum Science & Technology A, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Desorption Kinetics of Indium at the InAs/GaAs(001) HeterointerfaceMRS Proceedings, 1992