The effect of silicon doping on the lattice parameter of gallium arsenide grown by liquid-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques
- 1 November 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (3) , 648-653
- https://doi.org/10.1016/0022-0248(80)90009-3
Abstract
No abstract availableKeywords
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