Power losses and thermal modeling of a 4H-SiC VJFET inverter
- 24 October 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 4 (01972618) , 2630-2634
- https://doi.org/10.1109/ias.2005.1518831
Abstract
This paper presents a set of models for a SiC VJFET inverter from device level to system level. The simulations for SiC and Si inverters indicated that the SiC inverter has a much lower junction temperature, much less power loss, significantly enhanced energy efficiency, and a dramatic reduction in heatsink size as compared with the Si inverter. This demonstrated the technical feasibility and benefits of the all-SiC inverter. In addition to the simulations, experimental tests have also been conducted on SiC VJFETs and Schottky diodes for parameter extraction.Keywords
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