Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
Top Cited Papers
- 1 July 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 48 (7) , 1442-1447
- https://doi.org/10.1109/16.930664
Abstract
Models for the electron mobility in the three most important silicon carbide (SiC) polytypes, namely, 4H, 6H, and 3C SiC are developed. A large number of experimental mobility data and Monte Carlo (MC) results reported in the literature have been evaluated and serve as the basis for the model development. The proposed models describe the dependence of the electron mobility on doping concentration, temperature, and electric field. The low-field mobility in 4H SiC is much higher than in 6H and 3C in the doping range interesting for RF power transistors (10/sup 16/ cm/sup -3/ ...10/sup 18/ cm/sup -3/), whereas the saturation velocities in the three polytypes investigated are nearly the same (slightly above 2/spl times/10/sup 7/ cm/s at 300 K). The models developed can be easily incorporated into numerical device simulators.Keywords
This publication has 30 references indexed in Scilit:
- Measurement of high-field electron transport in silicon carbideIEEE Transactions on Electron Devices, 2000
- Full band Monte Carlo simulation of electron transport in 6H-SiCJournal of Applied Physics, 1999
- Monte Carlo study of electron transport in SiCJournal of Applied Physics, 1998
- Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiCMaterials Science Forum, 1998
- Calculations of the temperature and field dependent electronic mobility in β-SiCSolid-State Electronics, 1995
- Monte Carlo calculations of the temperature- and field-dependent electron transport parameters for 4H-SiCJournal of Applied Physics, 1995
- Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbideApplied Physics Letters, 1994
- Modeling of β-SiC MESFETs using hydrodynamic equationsSolid-State Electronics, 1993
- An ensemble Monte Carlo study of high-field transport in β-SiCPhysica B: Condensed Matter, 1993
- Temperature dependence of electrical properties of 3C-SiC(1 1 1) heteroepitaxial filmsPhysica B: Condensed Matter, 1993