Luminescent Characteristics of Plasma-Oxidized Porous Silicon

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Abstract
Porous silicon (PS) partially oxidized using electron-cyclotron-resonance plasma has been investigated. Blueshifting of photoluminescence (PL) peaks with progressive oxidation was observed at the initial stage whereas a sufficiently oxidized PS specimen had a room-temperature PL peak fixed at ∼685 nm. Electroluminescence (EL) from the specimens was stabilized by an additional H-plasma treatment after oxidation. This fact is well correlated with a significant reduction, after the H treatment, in intensity of cathodoluminescence (CL) peaks originating from defects in a SiO2matrix of oxidized PS. These results are discussed in relation to the origins of PL, EL and CL.