Evidence for hydrogen accumulation at strained layer heterojunctions
- 16 August 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (7) , 926-928
- https://doi.org/10.1063/1.110775
Abstract
The incorporation of hydrogen into strained InxGa1−xAs/GaAs quantum wells results in the formation of shallow, H-related radiative states which compete with, and quench, the intrinsic band-to-band luminescence. By comparing the photoluminescence data obtained from hydrogenated material with secondary ion mass spectroscopy profiles from deuterated material, it is possible to deduce that the H-related radiative states are associated with H which is accumulated at the well interfaces.Keywords
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