Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states
- 1 January 1992
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 12 (2) , 261-265
- https://doi.org/10.1016/0749-6036(92)90349-a
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Hydrogen passivation of interface defects in GaAs/AlAs short-period superlatticesApplied Physics Letters, 1992
- Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenationSolid State Communications, 1992
- The molecular beam epitaxial growth of GaAs on Si(100): a variable growth temperature studyJournal of Crystal Growth, 1991
- Characterization of the MBE growth of GaAs/Si(100) as a function of epilayer thicknessJournal of Crystal Growth, 1990
- Effect of hydrogen implantation on shallow and deep levels in GaAs growth by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1989