Characterization of the MBE growth of GaAs/Si(100) as a function of epilayer thickness
- 1 March 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 100 (3) , 635-639
- https://doi.org/10.1016/0022-0248(90)90262-j
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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