The molecular beam epitaxial growth of GaAs on Si(100): a variable growth temperature study
- 2 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (1-2) , 25-32
- https://doi.org/10.1016/0022-0248(91)90349-a
Abstract
No abstract availableKeywords
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