OMVPE growth and gas-phase reactions of AlGaN for UV emitters
- 15 December 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 195 (1-4) , 291-296
- https://doi.org/10.1016/s0022-0248(98)00675-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- In-situ reflectance monitoring during MOCVD of AlGaNJournal of Electronic Materials, 1998
- The effect of H2 on morphology evolution during GaN metalorganic chemical vapor depositionApplied Physics Letters, 1997
- Study of GaN and InGaN films grown by metalorganic chemical vapour depositionJournal of Crystal Growth, 1997
- High temperature adduct formation of trimethylgallium and ammoniaApplied Physics Letters, 1996
- A study of parasitic reactions between NH3 and TMGa or TMAIJournal of Electronic Materials, 1996
- Analysis of Real-Time Monitoring Using Interference EffectsJapanese Journal of Applied Physics, 1991
- Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1991
- Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPEJournal of the Electrochemical Society, 1986
- Studies of Organometallic Precursors to Aluminum NitrideMRS Proceedings, 1986
- Adducts in the growth of III–V compoundsJournal of Crystal Growth, 1984