Subband resonance at Na+ -contaminated SiSiO2 interfaces
- 31 May 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (5) , 443-446
- https://doi.org/10.1016/0038-1098(85)90946-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The dynamical conductivity of a Na+-doped interfacial charge layer on siliconSolid State Communications, 1984
- The metal insulator transition in two-dimensional systems with charged impuritiesSolid State Communications, 1983
- Influence of charged impurities on Si inversion-layer electronsPhysical Review B, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Impurity bands in inversion layersPhilosophical Magazine Part B, 1980
- Intersubband spectroscopy of inversion layers in the principal surfaces of silicon: Many-body and “impurity” effectsSurface Science, 1980
- Electronic states of impurities located at or near semiconductor–insulator interfacesJournal of Vacuum Science and Technology, 1978
- Inter-subband optical absorption in space-charge layers on semiconductor surfacesZeitschrift für Physik B Condensed Matter, 1977
- Electronic levels in surface space charge layers on Si(100)Physical Review B, 1976
- Lineshape of inter-subband optical transitions in space charge layersZeitschrift für Physik B Condensed Matter, 1976