Intersubband spectroscopy of inversion layers in the principal surfaces of silicon: Many-body and “impurity” effects
- 1 August 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 98 (1-3) , 469-480
- https://doi.org/10.1016/0039-6028(80)90528-2
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Intersubband-Cyclotron Combined Resonance in a Surface Space-Charge LayerPhysical Review Letters, 1978
- Electron-electron interaction and electronic properties of space-charge layers on semiconductor surfacesSurface Science, 1978
- Temperature dependence of the electron intersubband resonance on (100) Si surfacesPhysical Review B, 1977
- Inter-subband spectroscopy in hole space charge layers on (110) and (111) Si surfacesSolid State Communications, 1977
- Voltage-Tunable Far-Infrared Emission from Si Inversion LayersPhysical Review Letters, 1976
- Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surfaceSolid State Communications, 1976
- Surface quantum oscillations in (110) and (111) n-type silicon inversion layersSolid State Communications, 1975
- Shubnikov de Haas oscillations in n-type inversion layers on (110) and (111) surfaces of SiPhysics Letters A, 1975
- Resonance Spectroscopy of Electronic Levels in a Surface Accumulation LayerPhysical Review Letters, 1974
- Continuously Voltage-Tunable Line Absorption in Surface QuantizationPhysical Review Letters, 1971