Masked and selective thermal oxidation of GaAs-Ga1−xAlxAs multilayer structures
- 1 April 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (7) , 557-559
- https://doi.org/10.1063/1.92411
Abstract
The masked thermal oxidation of GaAs was carried out successfully with stripe Cr‐Au metal film as a mask. The oxidation rate of Ga1−xAlxAs was found to be much smaller than that of GaAs; this fact means that the thermal oxidation process is selective for the GaAs‐Ga1−xAlxAs multilayer structure. By means of this masked and selective thermal oxidation (MSTO) technique, the stripe optical waveguides of GaAs and stripe GaAs‐Ga1−xAlxAs double‐heterostructure (DH) lasers were fabricated. A demonstration of the stripe guide and some performance of stripe DH lasers are presented.Keywords
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