Adsorption Kinetics of Cs on GaAs
- 1 June 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (6) , 2624-2628
- https://doi.org/10.1063/1.1661569
Abstract
Cesium adsorption on vacuum‐cleaved p‐GaAs (110) was monitored at 10−10 Torr concurrently by photoemission and x‐ray photoelectron spectroscopy (ESCA). Cesium was supplied at R = 6.9×1012 atoms/cm2 sec by a calibrated valved room‐temperature Knudsen effusion cell. ESCA results showed that the first monolayer of Cs contains N = 6.2×1014 atoms/cm2, that it adsorbs irreversibly, and that fractional coverage is θ = 1−exp(− Rt/N). Maximum photoyield (hence minimum work function) corresponds to θ = 1. The second layer of Cs decreases photoyield, but is desorbed with a time constant of less than 1 min.This publication has 7 references indexed in Scilit:
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