Critical nature of oxide/interface quality for SiC power devices

This publication has 9 references indexed in Scilit:

• Electrical properties of thermal oxide grown using dry oxidation on p-type 6H-silicon carbide
  Applied Physics Letters, 1994
• SiC MOS interface characteristics
  IEEE Transactions on Electron Devices, 1994
• Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitors
  Journal of Applied Physics, 1994
• High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances
  IEEE Electron Device Letters, 1993
• Comparison of 6H-SiC, 3C-SiC, and Si for power devices
  IEEE Transactions on Electron Devices, 1993
• Mobility study on RIE etched silicon surfaces using SF/sub 6//O/sub 2/ gas etchants
  IEEE Transactions on Electron Devices, 1993
• Silicon-carbide high-voltage (400 V) Schottky barrier diodes
  IEEE Electron Device Letters, 1992
• Power semiconductor device figure of merit for high-frequency applications
  IEEE Electron Device Letters, 1989
• High Temperature Operated Enhancement-Type β-SiC MOSFET
  Japanese Journal of Applied Physics, 1988