A 40 GHz D-type flip-flop using AlGaAs/GaAs HBTs
- 24 August 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 189-192
- https://doi.org/10.1109/gaas.1994.636964
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- 25 to 40 Gb/s Si ICs in selective epitaxial bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- AlGaAs/GaAs HBTs fabricated by a self-alignment technology using polyimide for electrode separationIEEE Electron Device Letters, 1988
- Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector regionIEEE Electron Device Letters, 1988