Blue/green pn junction electroluminescence from ZnSe-based multiple quantum-well structures

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Abstract
The successful p doping of ZnSe by substitutional nitrogen using a plasma cell incorporated into the molecular beam epitaxy chamber has led to the development of electroluminescent devices based on carrier injection at a pn junction. The light emitting diode structures described here are grown on a GaAs substrate using a tetragonally distorted (In,Ga)As buffer layer to provide lattice matching between the substrate and the active II–VI region. The result of the incorporation of the buffer layer is an essentially dislocation‐free active region. The letter discusses optical properties as well as the x‐ray and transmission electron microscopy characterization of the quantum well device structures.